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yyyyyy x. yyyyyy

0000 xxxxxx xxxx , xxxx , xxxxx 00000 ~ (xxx-xxx-xxxx ~ abc@xyz.com

career profile

skilled optoelectronics professional with extensive expertise in constructing high power semiconductor lasers and 6 years experience in fabricating semiconductor devices in a cleanroom environment. successfully designed high power laser devices by p-side down mounting, including submount milling, electroplating, wire bonding and die-bonding, obtained cw power 0.5w at 2a for single device and 6w at 60a for bar. knowledge of strain effect on laser diode performance by analysis of multiple characterizations, including li, iv and impedance measurement, showed algainas strained qw laser is promising for uncooled operation.

education

ph.d. candidate in optoelectronics, expected: february 2009

university of new mexico, albuquerque, nm

  • dissertation: 1.55 µm algainas multi-quantum-well laser diodes, a study to investigate algainas system performance at 1.55 µm wavelength for uncooled laser application.

 

master degree in optics, july 1999

shanghai institute of optics and fine mechanics, shanghai, china

 

bachlor degree in optical engineering, july 1996

zhejiang university, hangzhou, china

career history

intern, august 2008 to october 2008

inphenix, livermore, ca

  • interned with leading developer and manufacturer of indium-phosphide (inp) and gallium arsenide (gaas) based active optoelectronic chips, devices and modules for the telecom, datacom, defense, biomedical and industrial markets.
  • refined, launched, and diagnosed deficiencies of labview test programs focused on measuring variable factors of semiconductor optical amplifiers (soas) and superluminescent light emitting diodes (sleds).
  • ensured that clients remained pleased with the size of deliverables and quality of packaging; oversaw flow and productivity of to-can packaging and controlled rma amount down.

 

algainas multi-quantum-well laser diodes, may 2003 to august 2008

university of new mexico, albuquerque, nm

  • successfully designed the 1.55 µm laser structure by modeling waveguide property.
  • designed labview programs to control measurement setups, including current source, voltage source, power meter, boxcar, and network analyzer.
  • obtained lasing wavelength between 1.55 and 1.57 µm for all 6 wafers with different structure.
  • engaged in cleanroom processing, including dielectric and metal film deposition, icp, rie, rtp, and photolithography to produce inp-based broad area and ridge waveguide laser devices.

 

quantum dot vertical cavity laser (vcsel), june 2001 to april 2003

university of new mexico, albuquerque, nm

  • designed, and tested optically and electrically pumped 1.3 µm vcsel.
  • implemented wafer processing and thermal oxidation of algaas dbr layers and produced the 2nd cw qd oxide-mirror vcsel to ever exist.
  • incorporated mgf2/znse high-reflection (hr) coating for optically pumped qd vcsel in e-beam dielectric evaporator, with less than 1% deviation from design wavelength.
  • achieved si/sinx hr coating by plasma enhanced chemical vapor deposition (pecvd).

 

 

assistant engineer, august 1999 to july 2000

shanghai institute of optics and fine mechanics, shanghai, china

  • formulated method of balancing power of 8 laser beams with film attenuator through a customized automatic control system.
  • implemented autocad procedures to produce mechanical parts.

presentations & research

 

temperature dependent performance of 1.55 mm algainas mqw laser diodes.

presented at ieee/leos/osa conference on lasers and electro-optics, baltimore, maryland, may 2005

activities & affiliations

  • member, optical society of america (osa), 2003 c present
  • treasurer, university of new mexico student chapter, 2003 c 2004
  • member, institute of electrical and electronics engineers (ieee)
  • member, laser and electro-optics society (leos)

 

 

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